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關(guān)注:1
2013-05-23 12:21
求翻譯:經(jīng)過Ar等離子體轟擊的GaAs表面產(chǎn)生更多雜質(zhì)的懸掛鍵,吸附空氣中大量的水蒸氣,氧,碳等深能級(jí)雜質(zhì)形成非輻射復(fù)合中心是什么意思?![]() ![]() 經(jīng)過Ar等離子體轟擊的GaAs表面產(chǎn)生更多雜質(zhì)的懸掛鍵,吸附空氣中大量的水蒸氣,氧,碳等深能級(jí)雜質(zhì)形成非輻射復(fù)合中心
問題補(bǔ)充: |
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2013-05-23 12:21:38
After the GaAs surface of ar plasma bombardment to produce more impurities, dangling bonds, the absorption of air in a lot of water vapor, oxygen, carbon and other deep-level impurity formation of non-radiative recombination centers
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2013-05-23 12:23:18
As a result of the bombardment GaAs Ar plasma surface resulting in more impurities of hanging in the air type, adsorption of water vapor, oxygen, carbon, and other deep level non-radiation particle formation Composite Center
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2013-05-23 12:24:58
Surface produces the more impurity hand key after Ar the plasma bombardment GaAs, in the adsorption air the massive steam, the oxygen, x-ray region of energy states impurities and so on carbon forms the non-radiative recombination center
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2013-05-23 12:26:38
Produce more impurities on GaAs surface by Ar plasma bombardment flying keys, large amounts of water vapor in the air, oxygen, carbon and formation of deep level impurities, such as non-radiative recombination centers
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2013-05-23 12:28:18
正在翻譯,請(qǐng)等待...
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