Successfully prepared aln nanowire arrays, and were characterized. According to the experimental results, the temperature of cvd prepared by aln nanowire arrays; the one hand, to explore novel mechanisms of the aln nanowire array growth; the other hand, through the preparation process of temperature

Successfully produced the AlN NM line array, and it was. Based on results of the experiment, the research on legal system AlN CVD NM line array; the impact of a novel exploring the AlN NM line array growth mechanisms; on the one hand, and by making the process temperature control of AlN NM size cont

The success has prepared the AlN nanometer array row, and has carried on the attribute to it.According to the experimental result, the research temperature prepares a AlN nanometer array row influence to the CVD law; On the one hand explores the novel AlN nanometer array row growth mechanism; On the

Successful preparation of AlN Nanowires arrayed, and characterization. Based on the experimental results, study on temperature effect of AlN Nanowire arrays prepared by CVD; while exploring new growth mechanism of AlN Nanowires arrays; on the other hand through the preparation process of temperature

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