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關注：1
2013-05-23 12:21
求翻譯：The specific fabrication process is summarized as follows. (1) A (1 1 0) plane monocrystalline silicon wafer was chosen as substrate, whose thickness is 0.4 mm. (2) A SiO2 layers were grown on both sides of the substrate by thermal oxidation as electrical isolation layers. (3) By means of low pressure chemical vapor de是什么意思？ 待解決
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The specific fabrication process is summarized as follows. (1) A (1 1 0) plane monocrystalline silicon wafer was chosen as substrate, whose thickness is 0.4 mm. (2) A SiO2 layers were grown on both sides of the substrate by thermal oxidation as electrical isolation layers. (3) By means of low pressure chemical vapor de
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2013-05-23 12:21:38
具體的制作過程可以概括如下。 （1）（1 0）面單晶硅片被選定為基板，其厚度為0.4毫米。 （2）SiO2層上生長的襯底雙方作為電氣隔離層的熱氧化。 （3）通過低壓化學氣相沉積（LPCVD），氮化硅層被沉積在基板的背面作為蝕刻掩模在KOH腐蝕。 （4）80納米多晶硅納米薄膜層沉積LPCVD的方式，在625°C的晶圓正面。 （5）為SiO2層沉積等離子增強化學氣相沉積（PECVD）方法，它是用來調整在多晶硅納米薄膜壓阻摻雜濃度對多晶硅納米薄膜層。 （6）樣品進行了摻雜硼離子注入摻雜濃度大約是3.0×1020 cm-3的（即，最佳摻雜濃度）根據LSS理論[19]。 （7）為了激活的硼離子電，使摻雜
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2013-05-23 12:23:18
具體制作過程概述如下。 (1)a(110)平面單晶硅晶圓被選定為基材,其厚度為0.4mm。 (2)長大了sio2層兩側的
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2013-05-23 12:24:58
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2013-05-23 12:26:38
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2013-05-23 12:28:18
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