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For example, as described in section 9.11 in order to enhance the laser work required by stimulated emission of radiation, there is a need to step-by-step inversion, in order to achieve semiconductor laser in the step-by-step inversion, we first consider in semiconductor and indirectly P -n or heter

If 9.11 state, in order to strengthen the stimulated radiation which the laser work needs, needs to divide the step the reverse, in order to achieve in the semiconductor laser a minute step the reverse, we considered first the degeneration semiconductor forms indirectly P-n ties or the neterogeny kn

As 9.11 section by in, to enhanced laser work by needed of by stress radiation, needs min step reverse, to reached Semiconductor Laser in the of min step reverse, we first considered Jane and type semiconductor indirect formed of P-n knot or different mass knot. This said knot ends of make-level ver

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