1979 gibbs and other semiconductor excitonic optical bistability phenomenon was observed in the The gaas fp standards with (L 5 ? m) [10]. They use the sample shown in Figure 5.25, on a GaAs substrate corrosion 1mm diameter through the light hole, and both sides coated reflector.

In 1979, Gibbs GaAs P the F - Standard (5m) ? observed in the optical semiconductor stress stability phenomenon [ 10]. The samples shown in Figure 5.25 , GaAs backing on the diameter of 1 mm of the corrosion on the hole, and two-sided coated mirror.

In 1979 Gibbs and so on (long 5 ? m) observed semiconductor exciton optics bistable phenomenon (10) in the GaAs F-P standard gauge.They use sample as shown in Figure 5.25, corrodes diameter 1mm on the GaAs substrate to pass the smooth hole, and both sides cover the reflector.

1979 Gibbs in GaAs, such as f-p Etalon (5 m long) observed in semiconductors excited ziguang phenomenon of bistability of [10]. They use sample shown in Figure 5.25, corrosion on the GaAs substrate 1mm diameter through holes, and coated mirrors on both sides.

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