|
關(guān)注:1
2013-05-23 12:21
求翻譯:寬帶半導(dǎo)體只能被能量大于其帶隙能的紫外光激發(fā), 而窄帶半導(dǎo)體被透過的能量小于寬帶半導(dǎo)體帶隙同時大于窄帶半導(dǎo)體帶隙的光( 主要是可見光) 激發(fā)是什么意思?![]() ![]() 寬帶半導(dǎo)體只能被能量大于其帶隙能的紫外光激發(fā), 而窄帶半導(dǎo)體被透過的能量小于寬帶半導(dǎo)體帶隙同時大于窄帶半導(dǎo)體帶隙的光( 主要是可見光) 激發(fā)
問題補充: |
|
2013-05-23 12:21:38
Broadband semiconductor only energy than the band gap energy of the UV excitation energy through narrow-band semiconductor is less than the broadband semiconductor band gap greater than the narrow-band semiconductor bandgap light (visible light) to stimulate
|
|
2013-05-23 12:23:18
Broadband semiconductor is only energy greater than the bandgap energy of the ultraviolet light shots, and narrow-band semiconductor is through the power of less than broadband semiconductor bandgap and narrow-band than the band gap semiconductor optical (visible light) is a major shot
|
|
2013-05-23 12:24:58
正在翻譯,請等待...
|
|
2013-05-23 12:26:38
Broadband semiconductor can be energy greater than the band gap energy of UV excitation, and narrow-band energy less than broadband semiconductor band-gap Semiconductor is through at the same time greater than the narrow band of semiconductor band-gap light (mostly visible light) stimulation
|
|
2013-05-23 12:28:18
The wide band semiconductor only can is bigger than by the energy its band gap to be able the ultraviolet photoexcitation, but the narrow band semiconductor the energy which penetrates is been smaller than the wide band semiconductor band gap simultaneously to be bigger than the narrow band semicond
|
湖北省互聯(lián)網(wǎng)違法和不良信息舉報平臺 | 網(wǎng)上有害信息舉報專區(qū) | 電信詐騙舉報專區(qū) | 涉歷史虛無主義有害信息舉報專區(qū) | 涉企侵權(quán)舉報專區(qū)