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關注：1
2013-05-23 12:21
求翻譯：GaAs表面被轟擊經過Ar等離子體而產生更多的懸掛鍵，吸附空氣中大量的水蒸氣，氧，碳等深能級雜質形成非輻射復合中心是什么意思？ 待解決
 懸賞分：1
- 離問題結束還有
GaAs表面被轟擊經過Ar等離子體而產生更多的懸掛鍵，吸附空氣中大量的水蒸氣，氧，碳等深能級雜質形成非輻射復合中心
問題補充： |
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2013-05-23 12:21:38
gaas surface was bombarded to produce more dangling bonds, adsorption in the air a lot of water vapor, oxygen, carbon and other deep-level impurity after ar plasma to form a non-radiative recombination centers
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2013-05-23 12:23:18
Surface GaAs Ar plasma after the bombardment of the hanging Key more adsorption in the air, and a lot of water vapor, oxygen, carbon, and other deep level to form a non-radiation Particle Composite Center
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2013-05-23 12:24:58
The GaAs surface is shelled produces after the Ar plasma the more hand key, in the adsorption air the massive steam, the oxygen, x-ray region of energy states impurities and so on carbon forms the non-radiative recombination center
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2013-05-23 12:26:38
GaAs surface bombardment after Ar plasma and produce more hanging keys, large amounts of water vapor in the air, oxygen, carbon and formation of deep level impurities, such as non-radiative recombination centers
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2013-05-23 12:28:18
正在翻譯，請等待...
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