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關注：1
2013-05-23 12:21
求翻譯：GaAs表面經過Ar等離子體轟擊的產生更多雜質的懸掛鍵，吸附空氣中大量的水蒸氣，氧，碳等深能級雜質形成非輻射復合中心是什么意思？ 待解決
 懸賞分：1
- 離問題結束還有
GaAs表面經過Ar等離子體轟擊的產生更多雜質的懸掛鍵，吸附空氣中大量的水蒸氣，氧，碳等深能級雜質形成非輻射復合中心
問題補充： |
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2013-05-23 12:21:38
gaas surface after ar plasma bombardment produce more impurities, dangling bonds on adsorption of water vapor in the air, oxygen, carbon and other deep-level impurities, the formation of non-radiative recombination centers
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2013-05-23 12:23:18
Surface Ar GaAs plasma bombardment by producing more impurities of hanging in the air type, adsorption, and a lot of water vapor, oxygen, and carbon impurities can level a non-radiation Composite Center
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2013-05-23 12:24:58
The GaAs surface after the Ar plasma bombardment production more impurity hand key, in the adsorption air the massive steam, the oxygen, x-ray region of energy states impurities and so on carbon forms the non-radiative recombination center
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2013-05-23 12:26:38
Produce more impurities of GaAs surface by Ar plasma bombardment flying keys, large amounts of water vapor in the air, oxygen, carbon and formation of deep level impurities, such as non-radiative recombination centers
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2013-05-23 12:28:18
正在翻譯，請等待...
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