|
關(guān)注：1
2013-05-23 12:21
求翻譯：本發(fā)明提供一種相變存儲單元及其制作方法，所述相變存儲單元除半導(dǎo)體襯底、第一電極層、相變材料層、第二電極層和引出電極之外，還包括用于避免所述相變材料層在化學(xué)機械拋光工藝中過度腐蝕的高阻材料層，所述高阻材料層的阻值至少為所述相變材料層的阻值的十倍以上，可以避免相變材料層在化學(xué)機械拋光工藝中過度腐蝕的現(xiàn)象，提高相變存儲單元的存儲性能和成品率。是什么意思？ 待解決
 懸賞分：1
- 離問題結(jié)束還有
本發(fā)明提供一種相變存儲單元及其制作方法，所述相變存儲單元除半導(dǎo)體襯底、第一電極層、相變材料層、第二電極層和引出電極之外，還包括用于避免所述相變材料層在化學(xué)機械拋光工藝中過度腐蝕的高阻材料層，所述高阻材料層的阻值至少為所述相變材料層的阻值的十倍以上，可以避免相變材料層在化學(xué)機械拋光工藝中過度腐蝕的現(xiàn)象，提高相變存儲單元的存儲性能和成品率。
問題補充： |
|
2013-05-23 12:21:38
The invention provides a phase-change memory cell and its production method, as described in phase-change memory cells in addition to the semiconductor substrate, first electrode layer, phase-change material layer, the second electrode layer and the electrode leads, but also includes to avoid layer
|
|
2013-05-23 12:23:18
正在翻譯，請等待...
|
|
2013-05-23 12:24:58
This invention provides one kind to change the memory cell and the manufacture method, states changes the memory cell except the semiconductor substrate, the first electrode level, changes the material level, the second electrode level and draws out outside the electrode, but also includes uses in a
|
|
2013-05-23 12:26:38
This invention provides a phase variable storage unit and making method, by in phase variable storage unit except semiconductor lined end of, and first electrode layer, and phase variable material layer, and second electrode layer and leads electrode zhiwai, also including for avoid by in phase vari
|
|
2013-05-23 12:28:18
This invention provides a phase variable storage unit and making method, by in phase variable storage unit except semiconductor lined end of, and first electrode layer, and phase variable material layer, and second electrode layer and leads electrode zhiwai, also including for avoid by in phase vari
|
湖北省互聯(lián)網(wǎng)違法和不良信息舉報平臺 | 網(wǎng)上有害信息舉報專區(qū) | 電信詐騙舉報專區(qū) | 涉歷史虛無主義有害信息舉報專區(qū) | 涉企侵權(quán)舉報專區(qū)
