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關注：1
2013-05-23 12:21
求翻譯：進一步證實了Si薄膜與SIC襯底的外延關系。為了更好的觀察異質結的周期性信息和匹配關系，我們對傅里葉變化花樣進行處理，去除了SiC襯底和Si薄膜的中偶然出現的堆垛層錯和孿晶等非周期性信息。Si薄膜（1區）、SiC襯底（2區）和異質結界面（3區）FFT處理后的圖分別如圖所示。由圖可知，Si薄膜與6H-SIC襯底分別具有明顯的FFC和6H結構特征，其面間距分別為3.21?和2.57?.是什么意思？ 待解決
 懸賞分：1
- 離問題結束還有
進一步證實了Si薄膜與SIC襯底的外延關系。為了更好的觀察異質結的周期性信息和匹配關系，我們對傅里葉變化花樣進行處理，去除了SiC襯底和Si薄膜的中偶然出現的堆垛層錯和孿晶等非周期性信息。Si薄膜（1區）、SiC襯底（2區）和異質結界面（3區）FFT處理后的圖分別如圖所示。由圖可知，Si薄膜與6H-SIC襯底分別具有明顯的FFC和6H結構特征，其面間距分別為3.21?和2.57?.
問題補充： |
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2013-05-23 12:21:38
Si film and the SiC substrate further confirmed the epitaxial relationship. In order to better observe the periodic information and the matching relationship of the heterojunction, the Fourier transform pattern for processing, in addition to the occasional stacking fault a sic substrate and si film
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2013-05-23 12:23:18
Further confirmation of the thin film and Si SIC backing the extension. In order to better observe the heterogeneity and periodic information to match, we have a variety of changes to the IP address, in addition to SiC Si film backing and the occasional mistake layer stack, such as Crystal and its n
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2013-05-23 12:24:58
Further confirmed the Si thin film and th
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2013-05-23 12:26:38
Further confirmed the Si thin-film epitaxy of SIC substrates. In order to better observe the heterojunction of periodic information and matching relationship we Fourier change pattern, removal of the SiC substrates and occasional stacking fault in Si thin films He Luanjing non-recurring information,
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2013-05-23 12:28:18
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