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關注：1
2013-05-23 12:21
求翻譯：但是與之前Si面生長情況比較，減小幅度較快。這一結果說明，在C面上生長的Si薄膜在晶格穩定性上要大于在Si面上生長的Si薄膜。是什么意思？ 待解決
 懸賞分：1
- 離問題結束還有
但是與之前Si面生長情況比較，減小幅度較快。這一結果說明，在C面上生長的Si薄膜在晶格穩定性上要大于在Si面上生長的Si薄膜。
問題補充： |
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2013-05-23 12:21:38
But compared with the previous growth of the si face, to reduce the magnitude faster. These results suggest that, si thin film growth in the c plane in the lattice stability is greater than the growth of si surface si film.
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2013-05-23 12:23:18
But with the growth of Si before comparison, decrease by a relatively fast. This shows that the growth of C Si on film on the wafer to be greater than the stability in Si Si on the film growth.
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2013-05-23 12:24:58
But compares with before Si surface growth situation, reduces the scope to be quick.This result showed that, grows the Si thin film on C to have to be bigger than the Si thin film in the crystal lattice stability which grows on the Si surface.
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2013-05-23 12:26:38
However, compared with growth of Si surface before, reduces more quickly. This results, in c on the surface growth of Si thin films on lattice stability than growth of Si thin films on Si surface.
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2013-05-23 12:28:18
正在翻譯，請等待...
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